Defect nature of the 0.4-eV center in O-doped GaAs
- 1 May 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (9), 829-831
- https://doi.org/10.1063/1.94109
Abstract
We have studied the Ec −0.4 eV center in O-doped GaAs by a combination of temperature-dependent Hall-effect measurements, spark-source mass spectroscopy, and secondary-ion mass spectroscopy. The conclusion is that neither O nor any other impurity can account for the 0.4-eV center; therefore, it is a pure defect.Keywords
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