Czochralski encapsulation growth of GeTe, SnTe and PbTe single crystals
- 31 October 1969
- journal article
- Published by Elsevier in Materials Research Bulletin
- Vol. 4 (10), 721-726
- https://doi.org/10.1016/0025-5408(69)90062-2
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Czochralski growth of lithium metagallateMaterials Research Bulletin, 1968
- Interpretation of the Hall coefficient, electrical resistivity and Seebeck coefficient of p-type lead tellurideBritish Journal of Applied Physics, 1967
- Single Crystal Growth of SnTe and GeTeJournal of the Electrochemical Society, 1966
- Partial Pressures in Equilibrium with Group IV Tellurides. III. Germanium TellurideThe Journal of Chemical Physics, 1964
- Partial Pressures in Equilibrium with Group IV Tellurides. II. Tin TellurideThe Journal of Chemical Physics, 1964
- Partial Pressures in Equilibrium with Group IV Tellurides. I. Optical Absorption Method and Results for PbTeThe Journal of Chemical Physics, 1964
- The Growth of Crystals from Compounds with Volatile ComponentsJournal of the Electrochemical Society, 1963
- A Technique for Pulling Single Crystals of Volatile MaterialsJournal of Applied Physics, 1962
- Syringe-Type Single-Crystal Furnace for Materials Containing a Volatile ConstituentReview of Scientific Instruments, 1958
- An apparatus for growing single crystals of gallium arsenideJournal of Scientific Instruments, 1957