Barrier height of Re and Os contacts to n-silicon
- 15 February 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (4), 313-315
- https://doi.org/10.1063/1.91475
Abstract
Barrier heights between as‐deposited (300 °C substrate temperature) Schottky contacts between Re and Os, and 〈100〉 n‐Si have been measured, by photoelectric response and analysis of forward I‐V data to 0.77 eV for Re, and 0.85 eV for Os. The trend of barrier heights for the 5d series elements, Hf‐Ta‐W‐Re‐Os‐Ir‐Pt‐Au is discussed and compared with quantities which have been correlated with the value of the barrier height, viz. work function, electronegativity, and heat of formation for the appropriate silicide. The comparison gives some preference for the simple correlation with work function.Keywords
This publication has 14 references indexed in Scilit:
- Measurements of the rectifying barrier heights of the various iridium silicides with n-SiApplied Physics Letters, 1979
- A modified forward I-V plot for Schottky diodes with high series resistanceJournal of Applied Physics, 1979
- Formation of iridium silicides from Ir thin films on Si substratesJournal of Applied Physics, 1979
- Schottky-barrier height of iridium silicideApplied Physics Letters, 1978
- A Correction Diagram for the Photoelectric Measurement of MS-Barrier HeightsPhysica Scripta, 1978
- Relation Between an Atomic Electronegativity Scale and the Work FunctionIBM Journal of Research and Development, 1978
- Chemical Bonding and Structure of Metal-Semiconductor InterfacesPhysical Review Letters, 1975
- FUNDAMENTAL TRANSITION IN THE ELECTRONIC NATURE OF SOLIDSPhysical Review Letters, 1969
- Metal-semiconductor surface barriersSolid-State Electronics, 1966
- Stability of Solid Phases in the Ternary Systems of Silicon and Carbon with Rhenium and the Six Platinum MetalsJournal of the American Ceramic Society, 1962