Ultrafast carrier dynamics on the Si(100)2×1 surface
- 15 December 1996
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 54 (24), R17300-R17303
- https://doi.org/10.1103/physrevb.54.r17300
Abstract
We present a study of ultrafast carrier dynamics on the clean Si(100)2×1 surface using time-resolved photoemission spectroscopy. A rapid thermalization inside the surface band is observed, and the carrier relaxation occurs on a time scale of a few hundred femtoseconds to a few picoseconds depending on the initial state energy. The relaxation time increases as the initial state energy decreases with respect to the band minimum.Keywords
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