First observation of two-dimensional hole gas in a Ga0.47In0.53As/InP heterojunction grown by metalorganic vapor deposition
- 1 October 1986
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (7), 2453-2456
- https://doi.org/10.1063/1.337158
Abstract
We report the observation of a two‐dimensional (2D) hole gas in Ga0.47In0.53As/InP heterojunction grown by metalorganic chemical‐vapor deposition. In a sample with a total hole density ptot =7.6×1011 cm−2 a Hall mobility μH =10 500 cm2/V s was reached at 4.2 K. Angle‐dependent Shubnikov–de Haas measurements as well as quantized Hall effect observations confirmed the two‐dimensionality of the system. In contrast to the case of the 2D hole gas in GaAs/AlGaAs, low‐temperature persistent photoconductivity was observed, significantly increasing the hole density at the interface.Keywords
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