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Deep Levels in SiC:V by High Temperature Transport Measurements
Home
Publications
Deep Levels in SiC:V by High Temperature Transport Measurements
Deep Levels in SiC:V by High Temperature Transport Measurements
WM
W.C. Mitchel
W.C. Mitchel
RP
Ronald Perrin
Ronald Perrin
JG
Jonathan Goldstein
Jonathan Goldstein
MR
Matthew D. Roth
Matthew D. Roth
MA
M. Ahoujja
M. Ahoujja
SS
S.R. Smith
S.R. Smith
AE
A.O. Evwaraye
A.O. Evwaraye
JS
J.S. Solomon
J.S. Solomon
GL
G. Landis
G. Landis
JJ
Jason R. Jenny
Jason R. Jenny
HH
H. McD. Hobgood
H. McD. Hobgood
GA
G. Augustine
G. Augustine
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1 February 1998
journal article
Published by
Trans Tech Publications, Ltd.
in
Materials Science Forum
Vol. 264-268
,
545-548
https://doi.org/10.4028/www.scientific.net/msf.264-268.545
Abstract
No abstract available
Keywords
HALL-EFFECT
SEMI-INSULATING MATERIAL
VANADIUM DOPING
Cited by 9 articles