Self-consistent calculation of the electronic properties of a selectively dopedAlxGa1−xAs−GaAsquantum well under high magnetic fields

Abstract

We present a self-consistent calculation of the electronic structure of an ${\mathrm{Al}}_x{\mathrm{Ga}}_{1-x}\mathrm{As}-\mathrm{GaAs}$-${\mathrm{Al}}_x{\mathrm{Ga}}_{1-x}\mathrm{As}$ selectively doped single quantum well (QW) 500 Å wide under a high magnetic field applied perpendicular to the interfaces of confinement of the two-dimensional electron gas (2D EG). The calculation shows that the energy difference between electronic subbands changes with the magnetic field when three electronic subbands are occupied. This effect is related to the heterostructure character of the QW considered. Moreover, it is shown that these variations are related to the oscillatory behavior of the 2D EG's charge density. Our results seem to be confirmed by the available experimental data found in the literature, and we propose additional experiments in order to further verify the results obtained.