Atomic-layer growth of GaAs by modulated-continuous-wave laser metal-organic vapor-phase epitaxy

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Abstract
Atomic‐layer epitaxy (ALE) including self‐arresting deposition mechanism at 100% surface coverage is realized in GaAs by a modulated‐continuous‐wave laser metal‐organic vapor‐phase epitaxy technique. Selective decomposition of trimethylgallium (TMG) or triethylgallium (TEG) on an As‐atom layer by laser irradiation is an important mechanism to realize the ALE. The experimental results are well‐explained by a calculation based on this selective decomposition mechanism.