Integrated In0.53Ga0.47As p-i-n f.e.t. photoreceiver

1 January 1980

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 16 (10), 353-355
https://doi.org/10.1049/el:19800252

Abstract

The first operation of an integrated p-i-n-photodiode/f.e.t.-amplifier on a single wafer of In0.53Ga0.47As grown lattice matched to an InP substrate is reported.

Keywords

INP
INTEGRATED INGAAS P-I-N FET PHOTORECEIVER

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