TEM Observation of Defects Induced by Cu Contamination on Si(100) Surface
- 1 October 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (10A), L1819
- https://doi.org/10.1143/jjap.27.l1819
Abstract
The behavior of a Si(100) surface defect induced by intentional Cu contamination was studied with transmission electron microscopy. After annealing at 1150°C for 1 hour in N2 atmosphere, colony precipitates lying along (110) planes were observed only on the surface of the wafer. These precipitates were estimated to be Cu6Si-type silicides by the selected area diffraction pattern. During additional annealing in an oxidation atmosphere, stacking faults were formed from each of colony precipitates. This indicated that colony precipitates were the nucleus of oxidation-induced stacking faults.Keywords
This publication has 3 references indexed in Scilit:
- Characterization of haze-forming precipitates in siliconJournal of Applied Physics, 1988
- Analysis of plate and colony precipitates decorating stacking faults in a single-crystal siliconJournal of Applied Physics, 1988
- Catastrophic breakdown in silicon oxides: The effect of Fe impurities at the SiO2-Si interfaceJournal of Applied Physics, 1987