Characterization of Si–SiO2 interface states: Comparison between different charge pumping and capacitance techniques

Abstract

The three‐level and spectroscopic charge pumping techniques, deep level transient spectroscopy and capacitance‐voltage measurements are both used to determine the energy distribution of Si–SiO₂ interface states on submicrometer metal–oxide–semiconductor field‐effect transistors and metal–oxide–semiconductor capacitors. This study is a systematic comparative analysis between charge pumping techniques and capacitance measurements. The measurements have been performed on different structures (n‐ and p‐type materials, low and high interface states densities) and the performances of each technique have been compared.