Growth and characterization of Ba0.6Sr0.4TiO3 thin films on Si with Pt electrodes

Abstract

Both metalorganic chemical vapor deposition and pulsed laser deposition have been used to grow ${\mathrm{Ba}}_{\mathrm{0.6}}{\mathrm{Sr}}_{\mathrm{0.4}}{\mathrm{TiO}}_{\mathrm{3}}$ (BST) thin films on Si with Pt electrodes. The smoother Pt electrodes allow the BST to grow with greater crystallinity. Thin film Pt/BST/Pt capacitors with a dielectric thickness of around 170 nm show dielectric constants over 400 and dielectric losses in the range of 0.01–0.03 at 10 kHz. The electric/dielectric properties of the BST films are further improved by first depositing a 27 nm BST seed layer by metalorganic chemical vapor deposition followed by a 145 nm BST layer deposited by pulsed laser deposition.