The Electrical Conductivity and Hall Coefficient of Bismuth Telluride

Abstract

This paper describes the variation of the electrical conductivity and Hall coefficient of a number of specimens of Bi₂Te₃ over a wide range of doping concentration. A detailed examination of these quantities, over the temperature range 1-3 to 660°K, has revealed the oxistence of trends which vary systematically with the degree of doping, although anomalies oxist within this scheme. It is shown that an impurity band mechanism may operate in n-type Bi₂Te₃.