Equivalent Circuits For High Frequency Transistors
- 24 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Millimetre-wave performance of state-of-the-art MESFET, MODFET and PBT transistorsElectronics Letters, 1987
- High-frequency limits of millimeter-wave transistorsIEEE Electron Device Letters, 1986
- A high aspect ratio design approach to millimeter-wave HEMT structuresIEEE Transactions on Electron Devices, 1985
- Computer Aided Two-dimensional Analysis of the Junction Field-effect TransistorIBM Journal of Research and Development, 1970
- Microwave Properties of Schottky-barrier Field-effect TransistorsIBM Journal of Research and Development, 1970
- General theory for pinched operation of the junction-gate FETSolid-State Electronics, 1969
- A high-frequency representation of the MOS transistorProceedings of the IEEE, 1966