Transmission electron microscopy of (001) CdTe on (001) GaAs grown by metalorganic chemical vapor deposition
- 18 May 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (20), 1423-1425
- https://doi.org/10.1063/1.97842
Abstract
The nature of dislocations in (001) CdTe‐(001) GaAs heterostructures was investigated by transmission electron microscopy. The samples were grown by metalorganic chemical vapor deposition with CdTe layer thicknesses h ranging from 0.1 to 2.2 μm. The interface contains an array of misfit dislocations spaced about 31 Å apart, independent of h. These dislocations do not relax all of the lattice mismatch (14.6%) in the CdTe layers with hh. No evidence of an oxide or foreign interface layer was found in these samples.Keywords
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