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Channeling effect of low energy boron implant in
Home
Publications
Channeling effect of low energy boron implant in
Channeling effect of low energy boron implant in
TL
T.M. Liu
T.M. Liu
WO
W.G. Oldham
W.G. Oldham
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1 March 1983
journal article
Published by
Institute of Electrical and Electronics Engineers (IEEE)
in
IEEE Electron Device Letters
Vol. 4
(3)
,
59-62
https://doi.org/10.1109/edl.1983.25647
Abstract
Unintentional ion channeling in low energy ion implantation of boron into
Keywords
BORON
IMPLANTS
SILICON
CMOS TECHNOLOGY
TAIL
ANNEALING
CAPACITANCE-VOLTAGE CHARACTERISTICS
CRYSTALLIZATION
AMORPHOUS MATERIALS
VERY LARGE SCALE INTEGRATION
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Open Access
Cited by 93 articles