In-plane and polar orientations of ZnO thin films grown on atomically flat sapphire
- 29 November 1999
- journal article
- research article
- Published by Elsevier BV in Surface Science
- Vol. 443 (1-2), L1043-L1048
- https://doi.org/10.1016/s0039-6028(99)01024-9
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Coaxial impact-collision ion scattering spectroscopy analysis of ZnO thin films and single crystalsMaterials Science and Engineering B, 1998
- Excitonic ultraviolet laser emission at room temperature from naturally made cavity in ZnO nanocrytal thin filmsMaterials Science and Engineering B, 1998
- The termination of the α-Al2O3 (0001) surface: a LEED crystallography determinationSurface Science, 1998
- Determination of surface polarity of c-axis oriented ZnO films by coaxial impact-collision ion scattering spectroscopyApplied Physics Letters, 1998
- Ultraviolet spontaneous and stimulated emissions from ZnO microcrystallite thin films at room temperatureSolid State Communications, 1997
- High quality crystalline ZnO buffer layers on sapphire (001) by pulsed laser deposition for III–V nitridesApplied Physics Letters, 1997
- In-plane orientation control of (001)YBa2Cu3O7−δ grown on (001)MgO by pulsed organometallic beam epitaxyApplied Physics Letters, 1996
- Determination Of The α-Al2O3(0001) Surface Relaxation and Termination by Measurements of Crystal Truncation RodsMRS Proceedings, 1996
- Atomic-scale formation of ultrasmooth surfaces on sapphire substrates for high-quality thin-film fabricationApplied Physics Letters, 1995
- Relationship between Self-Texture and Interfacial Restriction on the Epitaxy of ZNO Thinfilms IMRS Proceedings, 1992