High quality crystalline ZnO buffer layers on sapphire (001) by pulsed laser deposition for III–V nitrides
- 19 May 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (20), 2735-2737
- https://doi.org/10.1063/1.119006
Abstract
ZnO thin films with near perfect crystallinity have been grown epitaxially on sapphire (001) by pulsed laser deposition technique. The ω-rocking curve full width at half-maximum of the ZnO(002) peak for the films grown at 750 °C, oxygen pressure 10−5 Torr was 0.17°. The high degree of crystallinity was confirmed by ion channeling technique providing a minimum Rutherford backscattering yield of 2%–3% in the near-surface region (∼2000 Å). The atomic force microscopy revealed smooth hexagonal faceting of the ZnO films. It has been possible to deposit epitaxial AlN films of thickness 1000 Å on epi-ZnO/sapphire. Excellent crystalline properties of these epi-ZnO/sapphire heterostructures are, thus, promising for lattice-matched substrates for III–V nitride heteroepitaxy and optoelectronics devices.Keywords
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