Contact effects on silicon surface flashover studies
- 25 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 358-361
- https://doi.org/10.1109/ppc.1989.767497
Abstract
We studied the breakdown of n/sup +/nn/sup +/ silicon devices in vacuum and various dielectric fluids. The breakdown voltage exhibited a dependence on the abruptness of the high-low junction and on the dielectric constant of the surrounding dielectric liquid.Keywords
This publication has 2 references indexed in Scilit:
- Photon emission from reverse-biased silicon P-N junctionsSolid-State Electronics, 1988
- Avalanche Injection in SemiconductorsProceedings of the Physical Society. Section B, 1956