Calculation of carrier and lattice temperatures induced in Si by picosecond laser pulses
- 1 April 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (7), 624-626
- https://doi.org/10.1063/1.93167
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Dynamics of dense laser-induced plasmasPhysical Review B, 1980
- Carrier density dependence of Auger recombinationSolid-State Electronics, 1978
- Auger coefficients for highly doped and highly excited siliconApplied Physics Letters, 1977
- Hot-electron emission from n-siliconJournal of Physics and Chemistry of Solids, 1964