Numerical simulation of flow structures and instabilities occurring in a liquid-encapsulated Czochralski process
- 1 October 1991
- journal article
- Published by AIP Publishing in Physics of Fluids A: Fluid Dynamics
- Vol. 3 (10), 2310-2331
- https://doi.org/10.1063/1.857879
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- Numerical analysis of heat transfer in LEC growth of GaAsJournal of Crystal Growth, 1989
- Toward an integrated analysis of czochralski growthJournal of Crystal Growth, 1989
- Czochralski growth of silicon under an axial magnetic fieldJournal of Crystal Growth, 1989
- Instability of the bouyancy driven convection in Si melts during Czochralski crystal growthJournal of Crystal Growth, 1989
- Theory of transport processes in single crystal growth from the meltAIChE Journal, 1988
- Effect of natural convection and thermal transparency of liquid encapsulant on thermal stresses during LEG growth of GaAsInternational Journal of Heat and Mass Transfer, 1987
- Finite Element Analysis of a Thermal‐Capillary Model for Liquid Encapsulated Czochralski GrowthJournal of the Electrochemical Society, 1985
- Buoyancy-Driven Flows in Crystal-Growth MeltsAnnual Review of Fluid Mechanics, 1985
- Czochralski growth of siliconJournal of Crystal Growth, 1983
- Convective effects in crystals grown from meltJournal of Crystal Growth, 1981