Performance of Germanium and Silicon Surface Barrier Diodes as Alpha-Particle Spectrometers

Abstract

The characteristics of a germanium surface barrier diode operated at room temperature make it particularly useful as an alpha‐particle spectrometer. The small size, stability, energy resolution, and relative insensitivity to β and γ radiation of the units suggest applications in medical and nuclear research. Studies were made on Au–Ge and Au–Si surface barriers with a barrier width (≅1 μ) less than the range of the incident alpha particles. In the germanium units, the pulse‐height response to alpha particles increased linearly with energy up to 7.5 Mev and then increased monotonically but more slowly as the energy rose to 12 Mev. In silicon the deviation from linearity occurred around 6 Mev. The observed linearity between pulse height and energy depends simply on the fact that the number of carriers excited is proportional to the particle energy and that the time for the carriers to be collected at the barrier is less than the circuit time constant. The general theory of the transient response of the diode was developed and the calculated response compared with the observed behavior. The observed values of the energy required to create a hole‐electron pair, measured over the energy range of linear response of the junction, were ε_(Ge)=2.96±0.1 ev and ε_(Si)=3.9±0.3 ev.