Channel-implant dose dependence of hot-carrier generation and injection in submicrometer buried-channel PMOSFET's

Abstract

Hot-carrier generation and gate injection in submicrometer buried-channel PMOSFET's occur rather intensely because of their high doses for deep-channel ion implantation intended for drain punchthrough prevention. The generation and injection have a much stronger dependence on deep implantation than on shallow implantation, in accordance with measurement and simulation. Channel current distribution along depth (especially its peak position) in a drain depletion region is shown to be a particularly important factor in analyzing the implant dose dependence.