EFFECT OF DONOR IMPURITIES ON THE DIRECT-INDIRECT TRANSITION IN Ga(As1 - xPx)
- 15 February 1966
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 8 (4), 83-85
- https://doi.org/10.1063/1.1754498
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- ELECTRON MOBILITY IN GaAs1−xPx ALLOYSApplied Physics Letters, 1965
- Hall-Effect Measurements of n-Type Gallium PhosphideJournal of Applied Physics, 1965
- Electroluminescent recombination near the energy gap in GaP diodesSolid-State Electronics, 1964
- THE ``DIRECT-INDIRECT'' TRANSITION IN Ga(As1−xPx) p-n JUNCTIONSApplied Physics Letters, 1963