Binding of Electrons, Holes, and Excitons to Dislocations in Insulators

Abstract

The energies binding electrons, holes, and excitons to dislocations in insulators with cubic and wurtzite structures are estimated on the basis of deformation-potential theory. It is found in all practical cases that bound states exist for at least one and often both types of current carrier, and that screw dislocations are generally as effective in binding as are edge dislocations. From an estimate of trapping rates, it is concluded that during fluorescence the characteristic emission from dislocation states is strong enough for individual dislocations to be visible through an optical microscope.