Oxidation property of silicon small particles
- 15 April 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (15), 1662-1663
- https://doi.org/10.1063/1.105129
Abstract
The oxidation rate of silicon small particles prepared by a gas-evaporation method and with diameters ranging from about 20 to 500 nm is investigated by high-resolution transmission electron microscopy. It is found that the oxidation rate of silicon small particles is less than the rate for wafers, and decreases with decreasing particle size. This phenomenon cannot be explained by the Deal–Grove model.Keywords
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