Interference phenomena due to a double bend in a quantum wire
- 1 July 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (1), 102-104
- https://doi.org/10.1063/1.105558
Abstract
Narrow channel devices were fabricated using a split-gate high electron mobility transistor structure in which electrons are forced through a double-bend discontinuity. The low-temperature conductance shows a number of peaks in the lowest quantized conductance plateau which correspond qualitatively to resonance effects that are predicted for the geometrical discontinuities of the double bend.Keywords
This publication has 13 references indexed in Scilit:
- Multiprobe electron waveguides: Filtering and bend resistancesPhysical Review B, 1990
- Application of a mode-matching technique to quantum-wire transitions and discontinuitiesPublished by SPIE-Intl Soc Optical Eng ,1990
- Single-electron charging and periodic conductance resonances in GaAs nanostructuresPhysical Review Letters, 1990
- Transport through a finite one-dimensional crystalPhysical Review Letters, 1990
- The quantum transmitting boundary methodJournal of Applied Physics, 1990
- Resonant transport effects due to an impurity in a narrow constrictionSurface Science, 1990
- Analysis of discontinuities in quantum waveguide structuresApplied Physics Letters, 1989
- A versatile pattern generator for high-resolution electron-beam lithographyReview of Scientific Instruments, 1989
- One-dimensional transport and the quantisation of the ballistic resistanceJournal of Physics C: Solid State Physics, 1988
- Quantized conductance of point contacts in a two-dimensional electron gasPhysical Review Letters, 1988