Photoconductivity in Gold-Doped Silicon

Abstract

Photoconductivity has been studied in $p$- type gold-doped silicon at 20°K, 77°K, and 195°K. The impurity photoconduction shows a temperature dependence. At 20°K and 77°K, the data indicate a simple photoconductive process with a threshold at about 0.33 ev. At 195°K, the data indicate a complex photoconductive spectrum.