Primary defects in low-fluence ion-implanted silicon

Abstract

Electrical defect energy levels created by low‐fluence ionic impact were investigated using transient capacitance spectroscopy. The ion species used are ¹H⁺, ²H⁺₂, ⁴He⁺, ¹¹B⁺, and ³¹P⁺. The defect levels were identified by comparing these levels with those obtained in electron‐irradiated structures. The defect production yields for various ion species and for different fluences were obtained. Only a small fraction of the carrier removal could be accounted for by the observed DLTS levels.