Possible quantum effects in amorphous silicon double Schottky diodes

Abstract

Amorphous silicon double Schottky switching diodes in which one contact is vanadium, formed to produce switching, can show discrete steps in the I-V characteristics in the ON state. These steps frequently occur at resistances of h/2${\mathit{ne}}^2$ where n is an integer. The effect has been found quite strongly at room temperature, whereas in a previous report, only up to 190 K. Other conditions were also significantly different. A small-scale statistical analysis shows that the effect appears to be real. An expression for it is derived based on quantum confinement in small conducting inclusions.