Formation of Embedded Monocrystalline NiSi2 Grid Layers in Silicon by MBE

Abstract

Overgrowth of monocrystalline silicon films has been achieved by the molecular beam epitaxy technique on patterned NiSi₂ layers which were epitaxially grown on Si(111) substrates. The embedded NiSi₂ grid layer can be used as the gate in a permeable base transistor and can form buried electrodes in other novel devices.