Continuously tunable 1.5μm multiple-quantum-well GaInAs/GaInAsP distributed-Bragg-reflector lasers

Abstract

We demonstrate improved performance in tunable distributed-Bragg-reflector lasers using GaInAs/GaInAsP multiple-quantum-well active layers. We observe linewidths as low as 1.9 MHz, differential quantum efficiencies as large as 33%/front facet at 1.5μm, and rapid electronic access to all frequencies throughout a 1000GHz range.