Modification of field emitter array tip shape by focused ion-beam irradiation

Abstract

Tip shapes of Si field emitter arrays, fabricated by a conventional dry etching process, have been modified by focused ion‐beam (FIB) irradiation to obtain a sharp cone shape. Flat‐topped Si tips could be sharpened by localized sputtering using FIBs for a short time. Tip shape inspections and repairs were also performed using a FIB system combined with an electron‐beam column to remove metal residues and melted emitters.