Liquid phase epitaxially efficient visible emission from highly doped liquid phase epitaxially grown InP
- 1 December 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (11), 1038-1039
- https://doi.org/10.1063/1.91748
Abstract
Intense visible photoluminescence emission has been observed in liquid phase epitaxially grown InP layers which were heavily doped with group‐VI (S, Se, Te) elements. Up to 3% Se and over 1020 cm−3 n‐type carrier concentrations have been measured in such layers which exhibit InP crystal structures and lattice parameter.Keywords
This publication has 2 references indexed in Scilit:
- Transit time in the base region of drift transistors considering recombination and variable mobilitySolid-State Electronics, 1974
- Effective distribution coefficients of some group VI elements in indium phosphide grown by liquid phase epitaxySolid-State Electronics, 1974