Photoluminescence studies of GaAs/AlAs short period superlattices
- 31 December 1988
- journal article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 4 (2), 233-236
- https://doi.org/10.1016/0749-6036(88)90041-9
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Band offsets and zone-folding in GaAsAlAs (001) superlatticesSuperlattices and Microstructures, 1987
- Self-consistent electronic properties of two
GaAs AlAs Superlattices and Microstructures, 1987 - Optical evidence of the direct-to-indirect-gap transition in GaAs-AlAs short-period superlatticesPhysical Review B, 1987
- Photoreflectance spectroscopy of GaAsAlxGa1−xAs quantum wells under hydrostatic pressureSuperlattices and Microstructures, 1986
- Pressure dependence of GaAs/AlxGa1−xAs quantum-well bound states: The determination of valence-band offsetsJournal of Vacuum Science & Technology B, 1986
- On the band offsets of AlGaAs/GaAs and beyondSolid-State Electronics, 1986
- Perpendicular transport across (Al,Ga)As and the Γ to X transitionSuperlattices and Microstructures, 1986
- Apparatus for optical studies of materials at hydrostatic pressures and low temperatures in magnetic fieldsCryogenics, 1985
- Optical properties of superlattice and MQW laser diodeJournal of Vacuum Science & Technology B, 1985
- The solid helium pressure generation techniqueCryogenics, 1970