p-Channel AlGaAs/GaAs Heterostructure FETs Employing Two-Dimensional Hole Gas

Abstract

P-channel AlGaAs/GaAs heterostructure FETs (p-HFETs) employing two-dimensional hole gas (2DHG) were fabricated and their characteristics were measured at 300 and 77 K. The achieved extrinsic transconductances were respectively 16 mS·mm^-1 and 46 mS·mm^-1 with a gate length of 1 µm. Calculations indicate that transconductances of more than 100 mS·mm^-1 at 300 K and more than 200 mS·mm^-1 at 77 K should be achievable in p-HFET devices. The above results demonstrate the possibility of employing p-HFETs for complementary logic, workable even at room temperature.