The Temperature Variation of the Parameters of Silicon Controlled Rectifiers†

Abstract

The parameters of silicon controlled rectifiers carrying two base contacts are measured as a function of temperature in the range from room temperature to the normal limits of operation (140-160°c). The values of current gain of the two basic transistor sections of the device are measured as functions of emitter current over the same range of temperatures. The switching condition is found to be independent of temperature and the experimental results are explained in terms of normal transistor theory.