Influence of hydrogen implantation on the resistivity of polycrystalline silicon
- 15 February 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 57 (4), 1408-1410
- https://doi.org/10.1063/1.334499
Abstract
The grain boundary passivation effect in polycrystalline silicon (polysilicon) thin films by hydrogen implantation has been studied. Boron-doped polysilicon was implanted with low-energy ions followed by low-temperature annealing. Resistivity measurements show that the change in resistivity after implantation depends on the boron concentration in polysilicon. At low boron concentration (1×1019 cm−3), the resistivity increased after hydrogen implantation. This increase is ascribed to implant-induced damage which cannot be totally recovered by low-temperature annealing.Keywords
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