Mobility calculation of two-dimensional electron gas in GaAs/AlGaAs heterostructure at 4.2 K

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Abstract
Electron concentration and undoped AlGaAs spacer thickness dependencies of the mobility of a two-dimensional electron gas in a GaAs/AlGaAs single heterostructure are calculated at 4.2 K. The results predict extremely high electron mobility in this structure and agree quite well with very recent experimental data.