The influence of filament material on radical production in hot wire chemical vapor deposition of a-Si:H
- 1 August 2005
- journal article
- research article
- Published by Elsevier in Thin Solid Films
- Vol. 485 (1-2), 126-134
- https://doi.org/10.1016/j.tsf.2005.03.038
Abstract
No abstract availableKeywords
This publication has 30 references indexed in Scilit:
- Hot wire chemical vapor deposition of Si containing materials for solar cellsSolar Energy Materials and Solar Cells, 2003
- Studies on grain boundaries in nanocrystalline silicon grown by hot-wire CVDJournal of Non-Crystalline Solids, 2002
- Effect of Filament Material on the Decomposition of SiH4 in Hot Wire CVD of Si-Based FilmsMRS Proceedings, 2002
- Deposition of amorphous and microcrystalline silicon using a graphite filament in the hot wire chemical vapor deposition techniqueJournal of Vacuum Science & Technology A, 2001
- The influence of different catalyzers in hot-wire CVD for the deposition of polycrystalline silicon thin filmsThin Solid Films, 2001
- Nanocrystalline silicon from hot-wire deposition — a photovoltaic material?Thin Solid Films, 2001
- Probing radicals in hot wire decomposition of silane using single photon ionizationApplied Physics Letters, 2001
- The Influence of W Filament Alloying on the Electronic Properties of Hwcvd Deposited a-Si:H FilmsMRS Proceedings, 2000
- In Situ Diagnostics of Methane/Hydrogen Plasma Interactions with Si(100)MRS Proceedings, 1999
- Comparison of Tantalum and Rhenium Filaments in Diamond CVD Using Selective Carbon‐13 LabelingJournal of the Electrochemical Society, 1993