Effect on electrical properties of segregation of implanted P+ at defect sites in Si

Abstract

The aim of this work was to study the furnace annealing behavior of buried amorphous layers formed due to P⁺ implantation into Si and to investigate the effects of annealing on the electrical properties of the implanted layer. For this purpose, P⁺ was implanted into (111) Si in a non‐channeling direction at 120 KeV to a dose of 3 × 10¹⁴/cm² at RT. The implanted samples were subsequently annealed at 750° C. 90° cross‐sectional transmission electron microscopy (TEM), MeV He⁺ channeling, secondary‐ion mass spectrometry (SIMS), and electrical results were obtained from the same specimen. The TEM results showed that the annealing at 750° C resulted in the formation of two discrete damage layers at depths of 600 and 1100Å. However, the MeV channeling measurement indicated the presence of three damage regions; the third region being beyond the second damage layer observed by TEM. The SIMS measurements showed pronounced ’’pileups’’ of phosphorus atoms at three damage regions. The carrier‐concentration profile followed the atomic distribution curve. However, the mobility profile showed decreases only at the two deeper‐lying regions.