Temperature Fluctuations during Growth and Impurity Segregation in InSb Crystals
- 1 September 1962
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 33 (9), 2912-2913
- https://doi.org/10.1063/1.1702587
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Impurity Striations in Unrotated Crystals of InSbJournal of Applied Physics, 1961
- Anisotropic Segregation in InSbJournal of the Electrochemical Society, 1961
- LIQUID–SOLID INTERFACE SHAPE OBSERVED IN SILICON CRYSTALS GROWN BY THE CZOCHRALSKI METHODCanadian Journal of Physics, 1960
- Silicon n-p-n Grown Junction TransistorsJournal of Applied Physics, 1955
- Segregation of Impurities During the Growth of Germanium and SiliconThe Journal of Physical Chemistry, 1953