Photoconductivité Extrinsèque dans le GaAs

Abstract
The photoconductivity of Cr-doped GaAs has been studied between 0.75 and 6 μ with particular emphasis on long term effects and quenching at 80 K. Hall mobility measurements were also performed under various conditions of illumination. It is shown that extrinsic photoconductivity spectra of compensated materials must be interpreted with caution.