Weak localization and hole-hole interaction effects in silicon-boron delta layers
- 1 April 1992
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 7 (4), 604-607
- https://doi.org/10.1088/0268-1242/7/4/029
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Phase coherence of the electrons in δ-doped gaAsSuperlattices and Microstructures, 1991
- Electrical conduction in the Si(111):B-(√3 × √3 )R30°/a-Si interface reconstructionPhysical Review B, 1991
- Effect of Intersubband Impurity Scattering on the Anderson Localization in Two Dimensional Electron SystemsJournal of the Physics Society Japan, 1989
- Anomalous values of interaction constants in the two-dimensional electron gas of a silicon metal-oxide-semiconductor field-effect transistor measured by parallel- and perpendicular-field magnetoconductivityPhysical Review B, 1988
- Inelastic scattering time in two-dimensional disordered metalsPhysical Review B, 1983
- Effects of electron-electron collisions with small energy transfers on quantum localisationJournal of Physics C: Solid State Physics, 1982
- Magnetoresistance in Si metal-oxide-semiconductor field-effect transitors: Evidence of weak localization and correlationPhysical Review B, 1982
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982
- Magnetoresistance and Hall effect in a disordered two-dimensional electron gasPhysical Review B, 1980
- Ultrathin doping layers as a model for 2D systemsSurface Science, 1978