Low-threshold room-temperature double-heterostructure GaAs1−xSbx/AlyGa1−yAs1−xSbx injection lasers at 1-μm wavelengths
- 15 November 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 27 (10), 562-564
- https://doi.org/10.1063/1.88287
Abstract
Double‐heterostructure (DH) injection lasers based on the GaAs1−xSbx/AlyGa1−yAs1−xSbx system have been fabricated using liquid phase epitaxial growth techniques and operated at room temperature at wavelengths in the 1‐μm region. The observed room‐temperature threshold current densities, as low as 2100 A cm−2, are comparable to those of GaAs/AlGaAs devices of similar geometry.Keywords
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