Epitaxial growth of non-c-oriented SrBi2Nb2O9 on (111) SrTiO3

Abstract

Epitaxial ${\mathrm{SrBi}}_{\mathrm{2}}{\mathrm{Nb}}_{\mathrm{2}}{\mathrm{O}}_{\mathrm{9}}$ thin films have been grown with a (103) orientation on (111) ${\mathrm{SrTiO}}_{\mathrm{3}}$ substrates by pulsed-laser deposition. Four-circle x-ray diffraction and transmission electron microscopy reveal nearly phase-pure epitaxial films. Epitaxial (111) ${\mathrm{SrRuO}}_{\mathrm{3}}$ electrodes enabled the electrical properties of these (103)-oriented ${\mathrm{SrBi}}_{\mathrm{2}}{\mathrm{Nb}}_{\mathrm{2}}{\mathrm{O}}_{\mathrm{9}}$ films to be measured. The low-field relative permittivity was 185, the remanent polarization was 15.7 ${\mathrm{\mu C/cm}}^{\mathrm{2}},$ and the dielectric loss was 2.5% for a 0.5-μm-thick film.