Polycrystalline silicon thin film transistors on Corning 7059 glass substrates using short time, low-temperature processing
- 17 May 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (20), 2554-2556
- https://doi.org/10.1063/1.109294
Abstract
A new fabrication process for polycrystalline silicon thin film transistors on 7059 glass substrates is reported. This unique fabrication process has the advantages of short processing time and low processing temperature (≤600 °C). The processing is based on the key step of using an ultrathin Pd layer, introduced to the surface of the glass prior to the deposition of an a‐Si:H film, to reduce the crystallization time and temperature. It is also based on using an electron cyclotron resonance hydrogen plasma to reduced the passivation time. The n‐channel TFTs produced by this new fabrication process have mobilities of 20 cm2/V s, and off‐currents of 0.5 pA/μm.Keywords
This publication has 5 references indexed in Scilit:
- Low Thermal Budget Poly-Si Thin Film Transistors on GlassJapanese Journal of Applied Physics, 1991
- Short time electron cyclotron resonance hydrogenation of polycrystalline silicon thin-film transistor structuresApplied Physics Letters, 1990
- Selective area crystallization of amorphous silicon films by low-temperature rapid thermal annealingApplied Physics Letters, 1989
- Low-temperature polycrystalline-silicon TFT on 7059 glassIEEE Electron Device Letters, 1989
- Conductivity behavior in polycrystalline semiconductor thin film transistorsJournal of Applied Physics, 1982