Raman scattering from CdSe/ZnSe self-assembled quantum dot structures
- 15 June 2000
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 61 (23), 15641-15644
- https://doi.org/10.1103/physrevb.61.15641
Abstract
We report Raman scattering from CdSe/ZnSe self-assembled quantum dot structures. A series of samples, each with a different growth-interruption time before ZnSe caping of the CdSe dots, is investigated. ZnSe longitudinal optical (LO) phonon shifts as a function of the interruption time show a complex pattern due to the evolution of CdSe dots. We observe an LO phonon from the CdSe dots at as well as an interface phonon at We present evidence that the interface phonon is localized at the interface between the CdSe dots and the ZnSe cap layer.
Keywords
This publication has 16 references indexed in Scilit:
- Comment on “Dynamics of Ripening of Self-Assembled II-VI Semiconductor Quantum Dots”Physical Review Letters, 1999
- Leeet al.Reply:Physical Review Letters, 1999
- Confinement and electron-phonon interactions of theexciton in self-organized Ge quantum dotsPhysical Review B, 1999
- Evolution of Ge islands on Si(001) during annealingJournal of Applied Physics, 1999
- Spectroscopic characterization of the evolution of self-assembled CdSe quantum dotsApplied Physics Letters, 1998
- Raman study of interface modes subjected to strain in InAs/GaAs self-assembled quantum dotsPhysical Review B, 1998
- Self-organized quantum dots and quantum dot lasers (invited)Journal of Vacuum Science & Technology A, 1998
- Zero-dimensional excitonic confinement in locally strained Zn1−xCdxSe quantum wellsApplied Physics Letters, 1997
- In situ growth of nano-structures by metal-organic vapour phase epitaxyJournal of Crystal Growth, 1997
- Vertically Self-Organized InAs Quantum Box Islands on GaAs(100)Physical Review Letters, 1995