Some Aspects of the Design of Power Transistors
- 1 May 1955
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IRE
- Vol. 43 (5), 551-559
- https://doi.org/10.1109/jrproc.1955.278099
Abstract
This paper discusses some factors which have to be taken into account in the design of high power transistors. An effect of great importance is the reduction of emitter bias caused by transverse current flow in the base region. This effect is examined in some detail and the results of the discussion are applied to the design of improved transistor types. Finally, a short discussion of thermal stability and mechanical design is given.Keywords
This publication has 4 references indexed in Scilit:
- On the Variation of Junction-Transistor Current-Amplification Factor with Emitter CurrentProceedings of the IRE, 1954
- The Effect of Junction Shape and Surface Recombination on Transistor Current GainProceedings of the IRE, 1954
- Design Theory of Junction TransistorsBell System Technical Journal, 1953
- Power Rectifiers and TransistorsProceedings of the IRE, 1952