Generation-recombination noise produced in the channel of JFET's

1 August 1975

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 22 (8), 614-616
https://doi.org/10.1109/T-ED.1975.18187

Abstract

Measurements are presented of noise in JFET's at low temperatures (80-200 K) for devices having a low pinch-off voltage. The noise spectra show the presence of several types of generation-recombination g-r processes. Two processes are attributed to traps in the channel. Further, at the lowest temperatures a long plateau, associated with donor transitions, is observed.

Keywords

CHANNEL
RECOMBINATION NOISE
NOISE PRODUCED
SPECTRA SHOW
LOW PINCH
LOWEST TEMPERATURES
JFET'S MEASUREMENTS

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